SJMN90R1K2I Datasheet, KODENSHI KOREA

SJMN90R1K2I mosfet equivalent, n-channel mosfet.

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Features and benefits

* Drain-source breakdown voltage: BVDSS=900V
* Low gate charge device: Qg=13nC (Typ.)
* Low drain-source On-resistance: RDS(on)=1Ω (Typ.)
* Advanced trenc.

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